SILICON NITRIDE THIN FILM INCLUDING AMORPHOUS SILICON QUANTUM DOT FINE STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A silicon nitride thin film and a method for fabricating the same are provided to increase a luminous efficacy and to form a silicon fine structure having a good short wavelength luminous efficacy. CONSTITUTION: An amorphous silicon quantum dot fine structure is grown on a n-type silicon substrate by a PECVD method, using a nitride gas of 99.999% and a silane gas of 5% diluted in a nitride gas, thereby obtain a silicon thin film. The amorphous silicon quantum dot fine structure is scattered within a silicon nitride matrix. A flux of the silane gas is 10 sccm, the growth pressure is 0.5 Torr, and a plasma power is 6W. The growth temperature 100 to 300 deg.C, and a flux of the nitride gas is 500 to 800 sccm. The growth rate is 2.6 to 3.2 nm/minute according to the flux of the nitride gas. Consequently, the amorphous silicon quantum dot fine structure obtains a high luminous efficiency without performing a thermal treatment, and controls a color of a light radiated according to the flux of the nitride gas.