发明名称 |
METHOD FOR MANUFACTURING FINE PATTERN OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method for manufacturing a fine pattern of a semiconductor device is provided to prevent a lifting phenomenon of the fine pattern, by generating a footing under a photoresist pattern, and by eliminating the footing by a dry etch descum process. CONSTITUTION: Photoresist(12) is applied on a layer(10) formed on a semiconductor substrate, and a footing(16) is formed in a photoresist profile patterned by controlling the temperature of a soft bake. The footing of the photoresist profile is eliminated by using a dry etch descum process.
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申请公布号 |
KR20010037575(A) |
申请公布日期 |
2001.05.15 |
申请号 |
KR19990045160 |
申请日期 |
1999.10.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, SEOK JU;YOO, JI YONG |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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