发明名称 METHOD FOR MANUFACTURING FINE PATTERN OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for manufacturing a fine pattern of a semiconductor device is provided to prevent a lifting phenomenon of the fine pattern, by generating a footing under a photoresist pattern, and by eliminating the footing by a dry etch descum process. CONSTITUTION: Photoresist(12) is applied on a layer(10) formed on a semiconductor substrate, and a footing(16) is formed in a photoresist profile patterned by controlling the temperature of a soft bake. The footing of the photoresist profile is eliminated by using a dry etch descum process.
申请公布号 KR20010037575(A) 申请公布日期 2001.05.15
申请号 KR19990045160 申请日期 1999.10.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SEOK JU;YOO, JI YONG
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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