| 摘要 |
PURPOSE: A method for manufacturing a capacitor is to suppress the composition change of a BST((Ba,Sr)TiO3) dielectric film and to simplify a manufacturing process. CONSTITUTION: After the first insulating film(12) is formed on a semiconductor substrate(11) with a chip forming thereon, a portion of the first insulating film is etched to form a contact hole exposing a specific region of the chip. The contact hole is filled with conductive material to form a plug(13). After the second insulating film is formed on the entire surface of the substrate, the second insulating film is etched to expose the plug. A barrier layer(15) is formed on the entire surface of the substrate and is etched to expose an upper edge of the second insulating film. A lower electrode material is deposited on the entire surface of the substrate and is etched to expose the upper edge of the second insulating film. After a BST dielectric film(17) is formed on the entire surface of the substrate, an upper electrode(18) is formed on the BST dielectric film.
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