发明名称 PLASMA PROCESSING METHOD AND APPARATUS
摘要 PURPOSE: A method and an apparatus for processing a plasma are provided to reduce the charge-up damage in the plasma processing method. CONSTITUTION: In a parallel flat plate plasma processing apparatus, before ignition of a plasma, such a bias at a frequency at which the plasma is not ignited is applied to an electrode which holds a substrate to be processed. At the time of plasma quenching, the plasma is quenched in the condition of the bias applied to the electrode.
申请公布号 KR20010039877(A) 申请公布日期 2001.05.15
申请号 KR20000053675 申请日期 2000.09.09
申请人 TOKYO ELECTRON LIMITED 发明人 KOSHIISHI AKIRA;KOSHIMIZU CHISHIO;OYABU JUN;TAKEUCHI HIDEKI
分类号 H05H1/46;B01J19/08;C23C16/509;C23C16/511;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01J37/32 主分类号 H05H1/46
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