METHOD FOR FORMING CAVITIES IN A SEMICONDUCTOR SUBSTRATE BY IMPLANTING ATOMS,申请号KR1020007008441-传众专利搜索

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发明名称	METHOD FOR FORMING CAVITIES IN A SEMICONDUCTOR SUBSTRATE BY IMPLANTING ATOMS
摘要
申请公布号	KR20010040572(A)	申请公布日期	2001.05.15
申请号	KR1020007008441	申请日期	2000.08.02
申请人		发明人
分类号	H01L21/20	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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