发明名称 |
PROCESS OF ETCHING ALUMINUM-NEODYMIUM USING HYDROGEN IODIDE |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching process capable of effectively etching aluminum-neodymium alloy. SOLUTION: The method of etching an aluminum-neodymium alloy is comprised of exposing the alloy to plasma comprising a mixed gas of chlorine 62 and hydrogen iodide (H I) 64. Hydrogen iodide 64 is effective to etch the neodymium component in the alloy and chlorine 62 is effective to etch the aluminum component in the alloy. It is preferable that the mixed gas further contains BCl3 66 so that sputter-etching by boron ion can be carried out.
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申请公布号 |
JP2001131776(A) |
申请公布日期 |
2001.05.15 |
申请号 |
JP20000249974 |
申请日期 |
2000.08.21 |
申请人 |
AKT KK |
发明人 |
WANG KAI-AN;WU TZY-CHUNG;GOTO HARUHIRO H |
分类号 |
C23F4/00;H01L21/302;H01L21/3065;H01L21/3205;H01L21/3213;H01L23/52;(IPC1-7):C23F4/00;H01L21/306 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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