| 摘要 |
PURPOSE: A method and a system of post-deposition treating a carbon-containing layer on a substrate are provided to improve the oxidation resistance or loss resistance of a film by using a processing mode for generating treatment plasma or the treatment plasma. CONSTITUTION: An analytical recording data of electron spectroscopy/X-ray photoelectron spectro-scanning for chemical analysis performed on the variation of the chemical composition and coupling structure of an SiC layer, which is deposited on a dielectric layer and exposed to treatment plasma, such as He plasma and N2O plasma are produced. As a result, the coupling structure is fixed through the He plasma treatment. The surface composition of the SiC layer is changed by N2O plasma treatment and becomes to contain many C-C or C-H couplings and in addition, protects Si dangling couplings or other dangling couplings. The coupling variation on the surface strengthens adhesion of the SiC layer to the next layer. N2O oxidizes the thin portion of the layer through controlled exposure and forms a surface having a higher resistance with respect to deeper oxidation as compared with an untreated layer.
|
