METHOD FOR PROVIDING PULSED PLASMA DURING PORTION OF SEMICONDUCTOR WAFER PROCESS

摘要

PURPOSE: Disclosed is a method for providing a pulsed plasma during a portion of a semiconductor wafer process. CONSTITUTION: The method for processing a semiconductor wafer with a plasma using continuous RF power for a first phase of wafer processing and with pulsed RF power for a second phase of wafer processing. At this time, the wafer processing is an etch process including a main etching treatment and an over etching treatment. Also, the duty cycle against of the pulsed RF power has range from 10% to 90%.