| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve a high-breakdown voltage MOS transistor. CONSTITUTION: A semiconductor device is characterized in that the device is provided with a gate electrode(16) formed on a P-type well(2) via a gate oxide film(9), an N+ high-concentration source layer(12) formed is such a way as to adjoin the end part on one side of the end parts of this electrode(16), an N+ high-concentration drain layer(12) formed separately from the other end part of the electrode(16), a P-type body layer(14) formed under the lower part of the electrode(16) and an N- low-concentration drain layer(10) formed shallow under at least the electrode(16) and formed deep in the vicinity of the drain layer(12), which extends from the lower part of the electrode(16) to the drain layer(12).
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