METHOD FOR MANUFACTURING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a metal interconnection of a semiconductor device is provided to eliminate a cause of a defect of a damascene metal interconnection such as a void, by improving step coverage of metal in a damascene process. CONSTITUTION: A substrate(11) having a damascene pattern is prepared. The first metal interconnection is formed on the entire structure including the first inter-metallic insulating layer pattern. The first metal interconnection is etched by a blanket etching process, and the first metal interconnection of a spacer type is left on a sidewall of the damascene pattern. The second metal interconnection is formed to bury the damascene pattern, and a polishing process is performed to form a metal interconnection(14) inside the damascene pattern.