| 摘要 |
PURPOSE: A method for manufacturing a gate of a semiconductor device is provided to reduce a leakage current and to improve a hot carrier characteristic, by annealing a tungsten layer and forming a buffer layer on the tungsten layer to prevent the tungsten layer from being oxidized before a polysilicon layer damaged by etching is oxidized. CONSTITUTION: A gate oxide layer(20), a polysilicon layer(30), a tungsten layer(40) and a cap insulating layer(50) are sequentially formed on a semiconductor substrate(10), and etched to form a gate. The gate and the semiconductor substrate are annealed at a low temperature and in a nitrogen atmosphere to form a buffer layer on the tungsten layer. After the gate and the semiconductor substrate are oxidized, low-density ions are implanted into the semiconductor substrate to form a low-density region(70) by using the gate as a mask. A nitride layer is deposited on the entire surface of the gate and the semiconductor substrate, and etched to form a nitride layer sidewall(60) on a side surface of the gate. High-density ions are implanted into the semiconductor substrate to form a source/drain region(80) by using the nitride layer sidewall as a mask.
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