发明名称 MAGNETRON SPUTTERING SYSTEM AND MAGNETRON SPUTTERING METHOD
摘要 PROBLEM TO BE SOLVED: To enable deposition on a substrate without being affected by the magnitude of plasma density even in positions where rectilinearly forward and backward moving magnets 11 stop and to improve the life of a target 10 with a magnetron sputtering system. SOLUTION: The angle parts of the substrate 12 are arranged in the positions where the rectilinearly forward and backward moving magnets 11 stop and the positions corresponding to the moving ends of the highest plural density. A substrate body is loaded in such a manner that the substrate body is crossed diagonally with the moving direction of the magnets, by which the substrate body from the moving ends.
申请公布号 JP2001131742(A) 申请公布日期 2001.05.15
申请号 JP19990312043 申请日期 1999.11.02
申请人 NEC KAGOSHIMA LTD 发明人 HAMADA TSUTOMU
分类号 H01B13/00;C23C14/08;C23C14/35;(IPC1-7):C23C14/35 主分类号 H01B13/00
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