| 摘要 |
A semiconductor-on-insulator (SOI) device is fabricated by forming spaced apart trenches in a first face of a semiconductor substrate. An insulating layer is formed on the first face of the semiconductor substrate, including on the trenches. A second substrate is bonded to the insulating layer, opposite the semiconductor substrate. The semiconductor substrate is thinned at a second face thereof which is opposite the first face, until a semiconductor film remains on the insulating layer, having alternating thin and thick film semiconductor regions on the insulating layer. Source/drains are formed in the thin film semiconductor regions. Insulated gates are formed on the thick film semiconductor regions, such that a respective insulated gate is located between adjacent source/drains. SOI devices which can suppress floating body effects and yet provide dense integration may thereby be formed.
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