发明名称 STRUCTURE OF PAD FOR CHEMICAL MECHANICAL POLISHING
摘要 PURPOSE: A structure of a pad for chemical mechanical polishing is to allow a slurry to flow smoothly and to improve the uniformity and removal rate of polishing, by forming a groove between holes of the pad in an arch shape. CONSTITUTION: A pad used in polishing has through holes and a groove formed between the through holes. The groove is formed in a shape of an arch. The groove contains a lot of slurry. When a wafer is polished using the pad, the slurry flows from each through hole of the pad and is evenly diffused on the entire surface of the pad. The slurry flows toward a center of the groove. The wafer is polished with the pad, with the wafer opposed against to the pad surface. The arch-shaped groove allows the slurry to flow smoothly on the pad surface, so that the uniformity and removal rate of polishing is improved.
申请公布号 KR20010037856(A) 申请公布日期 2001.05.15
申请号 KR19990045586 申请日期 1999.10.20
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HAN, DONG WON
分类号 H01L21/302;(IPC1-7):H01L21/302 主分类号 H01L21/302
代理机构 代理人
主权项
地址