| 发明名称 |
Light floating gate doping to improve tunnel oxide reliability |
| 摘要 |
The reliability of a tunnel oxide is improved by light doping of the floating gate, as with phosphorous or arsenic atoms. Doping can be implemented by ion implantation or by in situ deposition. The relatively low dopant concentration further enhances charge retention on the floating gate.
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| 申请公布号 |
US6232630(B1) |
申请公布日期 |
2001.05.15 |
| 申请号 |
US19990348583 |
申请日期 |
1999.07.07 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
RAMSBEY MARK T.;PHAM TUAN;SUN YU;AU KENNETH WO-WAI;CHI DAVID H. |
| 分类号 |
H01L29/423;(IPC1-7):H01L29/72 |
主分类号 |
H01L29/423 |
| 代理机构 |
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