| 摘要 |
PURPOSE: A micro-switch and a fabricating method thereof are to employ an insulating film having a high permittivity to increase an impedance on/off ratio and an on-capacitance, and drive the switch with lower voltage, and also increase yield. CONSTITUTION: A lower electrode(2) formed on a substrate to use as a signal transmitting line. An insulating film (3) consisting of a ferroelectric material is formed on the lower electrode. A ground portion(6) is formed at both sides of the substrate to be apart from each other at a desired distance. A hinge(5) is formed on the insulating film having an air gap to be moved up and down. An upper electrode(4) is formed in a desired thickness on the hinge corresponding to the insulating film. The ferroelectric material is one of STO(strontium titanate oxide) and BSTO(barium STO). The ground portion has a thickness corresponding to a height of the air gap. The lower electrode has a thickness corresponding to the height of the air gap at both side of the insulating film.
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