发明名称 FIELD EMISSION DISPLAY AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A field emission display and manufacturing method thereof is provided to form a field emission display which express micro tips as pixel precisely image desired by separating electrically cathode electrode adjacent to as well as forming field emission display, and to improve productivity when executing manufacturing process not by executing specially impurity diffusion process or ion injection process. CONSTITUTION: An amorphous is doped with phosphine. A cathode electrode(44) is formed to separate silicon of polycrystal or microcrystal. A gate insulating layer(42) is formed on the top of silicon wafer(40) to do patterning gate hole to form micro-tip(48). A gate electrode(46) is formed on the top of gate insulating layer(42). A micro-tip(48) is formed in gate hole. As manufacturing method, The first thermal oxidation film is formed as gate insulating layer(42) on the top of silicon wafer(40). An amorphous doped with phosphine, silicon of polycrystal or microcrystal is formed on the top of the first thermal oxidation film. Silicon is removed to be done patterning as cathode electrode. The second thermal oxidation film is formed as gate insulator on the top of cathode electrode to be done patterning that cathode electrode to be done patterning is separated each other. Gate electrode and the second thermal oxidation film is removed in turns to form pattern having gate hole to form micro-tip(48). A micro-tip(48) is formed in gate hole.
申请公布号 KR20010037715(A) 申请公布日期 2001.05.15
申请号 KR19990045378 申请日期 1999.10.19
申请人 INSTITUTE FOR ADVANCED ENGINEERING 发明人 CHOI, YEONG HWAN;JUNG, JAE HUN
分类号 H01J1/30;(IPC1-7):H01J1/30 主分类号 H01J1/30
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