| 摘要 |
PURPOSE: A method for manufacturing a Levenson phase shift mask is provided to minimize damage to a substrate and to perform a precise phase shifting, by forming an inorganic thin film which has a transmissivity similar to that of the substrate and an etching characteristic different from that of the substrate. CONSTITUTION: An inorganic thin film(6) selected on a substrate(1), having a transmissivity similar to that of the substrate and an etching characteristic different from that of the substrate. The thickness of the selected inorganic thin film is calculated and deposited to a phase shift thickness. Chrome(2) is deposited on the deposited specific material. Exposure and development processes are performed regarding the deposited chrome to form a chrome pattern. Electron beam resist is applied on the pattern. Exposure and patterning processes are performed to expose the inorganic thin film by using the applied electron beam resist. The exposed inorganic thin film is etched to form a phase shift region(4) having a phase difference of 180 degrees and a phase non-shift region(5).
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