| 摘要 |
PROBLEM TO BE SOLVED: To at least sufficiently or completely remove residues of a sacrificial layer or avoid formation of the residues. SOLUTION: The relative humidity within an etching medium (24) is controlled and changed in proportion to the progress of removal of a sacrificial layer (2) in the method of manufacturing, wherein a surface micromachining type structure (9) is developed by providing and patternizing the layer (2) at least mostly or partly composed of silicon dioxide on a substrate (25) which can be heated, heaping and patternizing a second layer (3) on the layer (2), and removing the layer (2) using the etching medium (24) containing hydrofluoric acid gas in an etching process.
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