| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for cleaning in a process chamber capable of removing the Si-base deposits sticking to the inside of the process chamber without using costly gases and gases to affect a global warming effect and a substrate treating device. SOLUTION: In the case the cleaning process in the process chamber 2 is executed after the end of a deposition process, gaseous C4F6 is supplied to a fluorine forming section 19 and the gaseous C4F6 is irradiated with microwaves by a microwave irradiation device 18 in the state of continuing the reduced pressure evacuation of the inside of the process chamber 2 by a pump 9. At this time, the electrons e formed by the irradiation with the microwaves reacts chemically with the C4F6 and the C-F bonds of C4F6 are dissociated, by which fluorine F is formed. When this fluorine F is introduced into the process chamber 2, the fluorine F reacts chemically with the Si film and SiO2 film sticking to the inside wall, etc., of the process chamber 2 and the Si film and SiO2 film are decomposed away.
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