发明名称 Semiconductor device and manufacturing method thereof
摘要 A gate electrode includes a polycrystalline silicon layer, a barrier layer and a metal layer. The metal layer and barrier layer includes for example W and RuO2 layers, respectively. In forming the gate electrode, the metal layer and barrier layer are etched using at least one of the barrier layer and polycrystalline silicon layer as an etching stopper.
申请公布号 US6232209(B1) 申请公布日期 2001.05.15
申请号 US19990440568 申请日期 1999.11.15
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 FUJIWARA NOBUO;MARUYAMA TAKAHIRO;SAKAMORI SHIGENORI;TERATANI AKEMI;OGINO SATOSHI;OHMI KAZUYUKI;IRIE YUZO
分类号 H01L21/302;H01L21/28;H01L21/3065;H01L21/3213;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L21/320 主分类号 H01L21/302
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