发明名称 |
Method for fabricating a flash memory |
摘要 |
A method for fabricating a flash memory is disclosed, in which a stacked gate structure comprising a floating gate and a control gate on the substrate is first formed. Ions are implanted into the substrate at one side of the stacked gate. A drain having a heavily doped region and a lightly doped region are subsequently formed. Spacers one each side of the stacked gate structure are formed. By using a photoresist layer covering the spacer at the drain end, the spacer at the source end can be reduced by an etching process. The source region of the flash memory is formed by implanting ions into the substrate using the reduced spacer as a mask.
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申请公布号 |
US6232183(B1) |
申请公布日期 |
2001.05.15 |
申请号 |
US19990227680 |
申请日期 |
1999.01.08 |
申请人 |
UNITED MICROELECTRONICS CROP. |
发明人 |
CHEN HWI-HUANG;TING WENCHI |
分类号 |
H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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