| 摘要 |
PURPOSE: A method of fabricating a semiconductor device is to efficiently prevent Pt and a node contact from being reacted with a silicon, and at the same time, prevent O2 of a BST dielectric film from penetrating the Pt film and reacting with the node contact. CONSTITUTION: The first interlayer dielectric(22) is deposited on a semiconductor substrate(21) on which a device is formed. After forming a polyplug(23) to be connected with a desired portion of the device, the second interlayer dielectric(24) and a bit line conductive film(25) are deposited thereon in order. The bit line conductive film is patterned to be formed a bit line. The third interlayer dielectric(26), a nitride film(27) are deposited thereon in order. The nitride film, the third interlayer dielectric and the second interlayer dielectric are etched to expose the poly plug and form a node contact hole. After depositing polysilicon thereon, a planarizing process is performed to form a node contact(28). An oxide film is formed thereon and then etched to expose the node contact. Cobalt is deposited thereon and then annealed to be reacted with the polysilicon and form a cobalt silicide(31) on the node contact.
|
