METHOD FOR MANUFACTURING PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a pattern of a semiconductor device is provided to more freely control a critical dimension of a process and the depth of a trench, by forming a desired pattern on a semiconductor substrate through an etch process, an implantation process, an annealing process and an etch process. CONSTITUTION: An upper portion of a semiconductor substrate(10) is etched to be of a desired shape while the upper portion of the semiconductor substrate is masked. Particles of which molecular weight is heavy, are implanted to the upper portion for doping. The doping-diffused implantation process is etched to be of a desired pattern.