发明名称 Noise decoupling for semiconductor device with BiCMOS-type substrate
摘要 A semiconductor device of the type having an integrated circuit with connection terminals connected to metal pads by connecting wires is provided. The integrated circuit includes a semiconductor substrate having a lower portion on top of which there is an upper layer that is more heavily doped than the lower portion. A first block and a second block are produced in the upper part of the substrate, and decoupling means are arranged in the vicinity of the first block. The decoupling means include at least one decoupling circuit that is connected to the lower portion of the substrate and to a ground connection pad, and the decoupling circuit has a minimum impedance at a predetermined frequency. In one preferred embodiment, the decoupling circuit includes an inductive-capacitive resonant circuit having a resonant frequency substantially equal to the predetermined frequency. In another preferred embodiment, the decoupling means includes a plurality of decoupling circuits and each of the decoupling circuits has a minimum impedance at a different predetermined frequency. A mobile telephone apparatus that includes at least one such integrated circuit is also provided.
申请公布号 US6232645(B1) 申请公布日期 2001.05.15
申请号 US19990466727 申请日期 1999.12.17
申请人 STMICROELECTRONICS S.A. 发明人 BELOT DIDIER
分类号 H01L21/76;H01L21/822;H01L23/52;H01L27/04;H01L27/06;H01L27/12;H04B1/28;(IPC1-7):H01L29/00;H01L29/47 主分类号 H01L21/76
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