| 摘要 |
A manufacturing method of semiconductor devices in which sources and drains define effective channels having lengths which are essentially equal to target length is disclosed. The method includes the steps of forming a gate electrode on a semiconductor substrate, measuring a length of the gate electrode, calculating a lateral diffusion distance using the measured length of the gate electrode and a length of a target effective channel, determining implantation conditions for forming a source and drain having the lateral diffusion distance, and forming the source and drain, by ion implanting in accordance with the implantation conditions. Even though the length of the gate electrode is changed in accordance with a change of the process conditions, sources and drains defining effective channels of a target length can be formed. Also, the manufacturing method can be used for two or more semiconductor substrates so that semiconductor devices formed on the two or more semiconductor substrates have sources and drains defining effective channels having the same lengths.
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