| 摘要 |
An apparatus for depositing thin films of a semiconductor device. The thin film deposition apparatus includes: a reactor maintained at a constant pressure; at least two reaction gas supply portions for supplying reaction gases to the reactor; an exhaust pump for discharging the gases out of the reaction gas supply portions and/or the reactor; first flow control valves installed between each reaction gas supply portion and the reactor, for controlling the amount of gases flowing between the reaction gas supply portions and the reactor; second flow control valves installed between each reaction gas supply portion and the exhaust pump, for controlling the amount of gases flowing between the reaction gas supply portions and the exhaust pump; an inert gas supply portion for supplying an inert gas into the reactor; reaction gas pipe lines, wherein the reaction gases provided from the reaction gas supply portions flow through the reaction gas pipe lines to the reactor and/or the exhaust pump; an inert gas pipe line, wherein the inert gas provided from the inert gas supply portion flows through the inert gas pipe line to the reactor; and a plurality of valves installed in the reaction gas pipe lines and/or the inert gas pipe lines, for controlling the amount of reaction gases and inert gas flowing into the reactor and/or the exhaust pump.
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