| 摘要 |
PURPOSE: A method for manufacturing an electro-optical device is provided to provide have good operation performance and high reliability and increase the quality of electronic equipment (an electronic device) having the electro-optical device as a display by increasing the image quality of the electro-optical device. CONSTITUTION: The gate electrodes(19a,19b) become a double gate structure electrically connected by a gate wiring(211) which is formed by a different material(a material having a lower resistance than the gate electrodes(19a,19b)). Of course, not only a double gate structure, but a so-called multi-gate structure (a structure containing an active layer having two or more channel forming regions connected in series), such as a triple gate structure, may also be used. The multi-gate structure is extremely effective in lowering the value of the off current, and by making the switching TFT of the pixel into a multi-gate structure with the present invention, a low off current value can be realized for the switching TFT. The active layer is formed by a semiconductor film containing a crystal structure. In other words, a single crystal semiconductor film may be used, and a polycrystalline semiconductor film or a microcrystalline semiconductor film may also be used. Further, the gate insulating film may be formed by an insulating film containing silicon. Additionally, any conducting film can be used for the gate electrodes, the source wiring, and the drain wiring. In addition, the LDD regions in the switching TFT are formed so as not to overlay with the gate electrodes(19a-19b) by interposing the gate insulating film. |
