| 摘要 |
PURPOSE: A method for growing an oxide thin film is provided to induce various metal ions to the inside of an oxide structure and to rapidly grow the oxide thin film, by using an oxygen source material in an atomic layer deposition(ALD) method such that the oxygen source material is less active regarding the oxidation of a substrate. CONSTITUTION: The oxide thin film is grown by an ALD method in which the oxide thin film is adhered to a substrate through alternate surface reactions of a metal source material and the oxygen source material. The oxygen source material has at least one organic ligand, and is a boron, silicon or metal compound in which an oxygen atom is coupled to at least one boron, silicon or metal atom. |
