| 摘要 |
PURPOSE: A method for manufacturing a thin film transistor is to conveniently form a lightly doped drain or an offset region required to a thin film transistor through a chemical process. CONSTITUTION: A substrate(20) is provided with a buffer layer(22), an active layer(24) and an insulating layer(26) in turn on the surface thereof. On the insulating layer is deposited a layer for gate electrode on which is applied with a photoresist. The photoresist is removed by a photolithography to form a gate electrode(28). With the gate electrode as a mask, an ion doping is effected at a low concentration and thereby both side portions of the active layer is functioned as a lightly doped drain region(30). With an electric chemical process the outer surface of the gate electrode is deposited with polymer at a predetermined thickness. With the deposited gate electrode as a mask, the active layer is ion-doped at a high concentration to be changed into a source and drain contact layer. The entire surface of the gate electrode is applied with an insulating layer. On a part of the insulating layer is formed a via hole communicated with the source and drain contact layers. The via hole is subject to a sputtering with metal so that a source electrode is leaded from the contact layer to the outer side of the substrate along with a drain electrode.
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