PLATFORM FOR SUPPORTING SEMICONDUCTOR SUBSTRATE AND METHOD OF SUPPORTING SUBSTRATE DURING RAPID HIGH TEMPERATURE PROCESSING

摘要

PURPOSE: A platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing is provided to maximally conduct heat to a substrate from a heating assembling device of a reactor and, at the same time, support a semiconductor substrate of which diameter is over 300 mm. CONSTITUTION: A platform(412) as a substrate-support means includes a quartz substrate, and the quartz substrate is covered with a coating of silicon and silicon carbide for making the quartz substrate(418) opaque. When a substrate(12) is supported on a support surface(414), a platform(412) and the substrate(12) are combined, thus preventing photon energy from being transmitted from a heater that is provided at a lower side.