| 摘要 |
PURPOSE: To provide a method of cleaning for thin film deposition system, capable of removing a reaction product adhering to an exhaust system and capable of prolonging the maintenance cycle of thin film deposition system. CONSTITUTION: Heat treatment equipment 1 has a reaction chamber 2 for depositing silicon oxide film on a semiconductor wafer 10 by feeding TEOS under low-pressure atmosphere and an exhaust pipe 15 connected to the reaction chamber 2. When hydrogen fluoride gas is introduced into the exhaust pipe 15 to clean the exhaust pipe 15 during the process of depositing silicon oxide film on the semiconductor wafer 10 using the heat treatment equipment 1, the deposition of the silicon oxide film and the removal of the reaction product adhering to the exhaust pipe 15, etc., can be performed simultaneously and the maintenance cycle of the heat treatment equipment 1 can be prolonged.
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