METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is to prevent a surface resistance increasing according to a high integration, to improve a surface luminance and a thickness uniformity of a self-aligned silicide layer and to prevent a volume expansion from excessively generating. CONSTITUTION: A substrate(100) is provided with a gate electrode(104) of polysilicon on its surface. The gate electrode is formed with a lightly doped drain(106) by an ion implantation at a low concentration on its edge. On the both sidewalls of the gate electrode is formed a spacer(108) consisting of oxide or nitride. To overlap the lightly doped drain an active region(110) for the source and drain is formed by an ion implantation at a high concentration. On the resultant is formed an oxide layer(112) of a predetermined thickness. On the oxide layer is formed a transition metal layer(114) of Ni or Ni alloy. The resultant substrate is subject to a heat treatment in a furnace or a rapid thermal process apparatus to a self-aligned silicide layer(114a) only on the gate electrode and the active region. The unreacted transition metal layer and insulating layer are removed.