METHOD OF FORMING METAL THIN FILM OF SEMICONDUCTOR DEVICE USING METAL HALOGEN GAS

摘要

PURPOSE: A method of forming a metal thin film of a semiconductor device is to prevent degeneration of a lower metal film due to a halogen component of a metal halogen gas used when forming a metal thin film. CONSTITUTION: A semiconductor substrate on which a metal lower film is formed is loaded in a reaction chamber. Metal halogen gas is introduced in the reaction chamber to form a metal thin film on the metal lower film. In a preprocess of introducing of the metal halogen gas, A reaction gas having higher binding force with a halogen group of the metal halogen gas than a metal component of the metal halogen gas is introduced. The metal lower film can be formed with a heat-resistant metal film or a heat-resistant metal silicide. The heat-resistant metal film is a Ti film, a Co film or a Ni film. The heat-resistant metal silicide is TiSi2 or CoSi2. The metal film is a Ti film, a TiN film or a RiSiN film. If the metal film is the Ti film, the metal halogen gas is TiCl4.