| 摘要 |
PURPOSE: A method for manufacturing an isolation structure of a semiconductor device is provided to simplify a manufacturing process, by transforming a substrate to porous silicon by using anodizing, and by selectively oxidizing the porous silicon to form an isolation structure. CONSTITUTION: A pad oxide layer(2) and a nitride layer(3) are sequentially deposited on a substrate(1), and a part of the nitride layer and the pad oxide layer are patterned to define an active region exposing a part of the substrate. An ion implantation layer is formed in a lower region of the exposed substrate by an ion implantation process using the remaining nitride layer as an ion implantation mask to cause damage to the exposed substrate. A predetermined depth of the exposed substrate is transformed to porous silicon by using an anodizing. The porous silicon is oxidized to form an isolation structure(5).
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