| 摘要 |
A memory device. The memory device includes an array of memory cells that are coupled to a number of word lines and a number of digit lines. The memory device further includes an addressing circuit that is coupled to the array. The addressing circuit selects a memory cell based on a received address signal. An input/output device is coupled to the digit lines of the array. The input/output device includes an input for receiving a control signal. A control circuit is coupled to the input of the input/output device. The control circuit produces a control signal with a first voltage level when reading data from the array and produces a control signal with a second voltage level when writing data to the array. Thus, the control signal causes the input/output device to provide acceptable drive current during a read operation such that the input/output device does not disturb the data on the digit lines. Further, the control signal provides sufficient drive current during a write operation to allow the data on input/output lines to be passed to the digit lines.
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