| 摘要 |
PURPOSE: A MOS capacitor is to reduce an area where a capacitor occupies in a chip by vertically forming an additional capacitor on the MOS capacitor without a special area for ensuring a large capacitance. CONSTITUTION: The first gate is disposed on a predetermined part of an active region above a substrate in the state of interposing a gate insulating layer between the substrates. A source/drain is formed on both sides of the first gate at a predetermined depth from the surface of the substrate. The second gate surrounds the first gate in the form of opening one side of the first gate. The first gate is extended in the direction of one side of the opened second gate. The first contact electrically connects the second gate with the source/drain. The first interconnection is formed on an end of the first gate to apply a gate voltage to the first gate, and electrically is connected to the first gate through the second contact. The second interconnection is formed on an end of the first interconnection. The first and second interconnections are electrically connected to each other through the fourth contact. The fourth contact is electrically connected with the fourth gate. The first dielectric is disposed between the source/drain and the first gate.
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