发明名称 |
Oxide profile modification by reactant shunting |
摘要 |
A method of fabricating a semiconductor device and the device which includes initially providing a layer of silicon having a thin oxide layer thereon and a patterned layer of a masking material not permeable to at least selected oxygen-bearing species and having a sidewall disposed over said oxide layer to provide an exposed intersection of the masking material and the oxide layer. An oxygen-bearing species conductive path is then formed on the sidewall of the masking material extending to the exposed intersection for conducting the selected oxygen-bearing species. A sidewall layer of a material different from the conductive path is formed on the conductive path. An oxygen-bearing species is then applied to the exposed intersection through the path and a thick oxide surrounding the masking material is fabricated concurrently or as a separate step. The masking material is preferably silicon nitride, the path is preferably silicon oxide and the sidewall layer is preferably silicon nitride.
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申请公布号 |
US6232644(B1) |
申请公布日期 |
2001.05.15 |
申请号 |
US19990389006 |
申请日期 |
1999.09.02 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
RICHARDSON WILLIAM F.;HU YIN |
分类号 |
H01L21/762;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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