发明名称 METHOD OF FORMING METAL PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a method of forming a metal pattern, by which a fine metal pattern excellent in adhesion of the metal to a substrate can be obtained independently of the kinds of the substrates at a low cost in a simple process and which an be widely utilized in electrical, electronic and communication fields. SOLUTION: The method of forming a metal pattern is a metal pattern forming method based on a micro-stamp method forming a fine structure by the transfer of the pattern by a stamp and is comprised of a step forming a silicon polymer thin having reducible property on the surface of a substrate, then a step treating the substrate with a solution containing a metal salt of a metal having standard redox potential of >=0.54 V in order to deposit a corresponding metal colloid on the surface of the substrate, thereafter a step forming a pattern on the metal colloid layer by the transfer by stamping the pattern to which an alkane thiol stuck, and a step subjecting the film having the pattern to electroless plating, thereby a step that the metal pattern is formed only on a part where the silicon polymer thin film is formed and is free from the pattern of the alkane thiol.
申请公布号 JP2001131758(A) 申请公布日期 2001.05.15
申请号 JP19990311215 申请日期 1999.11.01
申请人 SHIN ETSU CHEM CO LTD 发明人 FUKUSHIMA MOTOO;TABEI EIICHI;FURUHATA TOMOYOSHI;ARAKAWA MASAYA
分类号 H05K3/20;C23C18/16;C23C18/18;C23C18/31;H01L21/288;H01L21/3205;H01L21/768;H05K3/18;(IPC1-7):C23C18/18 主分类号 H05K3/20
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