发明名称 |
Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism |
摘要 |
A semiconductor device includes a bipolar transistor whose emitter-collector voltage is set to satisfy a condition IBE<ICB according to a voltage applied across a base and emitter where IBE is the base current flowing through a base-emitter path in a forward direction, and ICB is the base current flowing through a collector-base path in a reverse direction.
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申请公布号 |
US6232822(B1) |
申请公布日期 |
2001.05.15 |
申请号 |
US19940268728 |
申请日期 |
1994.06.30 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAKUI KOJI;HASEGAWA TAKEHIRO;WATANABE SHIGEYOSHI;MASUOKA FUJIO;FUSE TSUNEAKI;SESHITA TOSHIKI;ARITOME SEIICHI;NITAYAMA AKIHIRO;HORIGUCHI FUMIO |
分类号 |
G11C11/39;H01L27/102;H01L29/36;H01L29/423;H01L29/45;H01L29/73;H01L29/732;H01L29/885;H03F3/04;H03K3/021;H03K17/567;(IPC1-7):H03K17/687 |
主分类号 |
G11C11/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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