| 发明名称 |
Semiconductor device and manufacturing method thereof |
| 摘要 |
A highly reliable semiconductor device and a manufacturing method thereof are provided, without lowering the mobility of carriers, by increasing the nitrogen concentration of part of a gate insulating film. Nitrogen containing regions containing nitrogen are provided on both end portions of a gate insulating film which is formed into a uniform thickness.
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| 申请公布号 |
US6232187(B1) |
申请公布日期 |
2001.05.15 |
| 申请号 |
US19990280992 |
申请日期 |
1999.03.30 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KUROI TAKASHI;SAYAMA HIROKAZU |
| 分类号 |
H01L21/8247;H01L21/28;H01L21/336;H01L27/115;H01L29/51;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L21/336;H01L21/425 |
主分类号 |
H01L21/8247 |
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