| 摘要 |
PURPOSE: A unit pixel of an image sensor is provided to increase a photosensitivity by minimizing a noise of an output signal and remove a blooming effect. CONSTITUTION: A unit pixel comprises a photodiode(110) and five NMOS transistors. A transfer transistor(120) has a source-drain path formed between the photodiode and a floating node(160), and its gate connected to the first control signal. The first reset transistor(130a) has a source-drain path formed between the floating node and a power supply voltage(VDD) and its gate connected to the second control signal. A drive transistor(140) has its gate connected to the floating node and its source connected to the power supply voltage. A select transistor(150) has its gate connected to the third control signal, its source connected to a drain of the drive transistor, and its drain connected to a signal line. The second reset transistor(130a) has a source-drain path formed between the photodiode and the power supply voltage and its gate connected to the second control signal.
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