| 摘要 |
PURPOSE: A programming method for a flash memory device is provided to selectively program target memory cells not normally programmed so as to reduce a programming time. CONSTITUTION: The method comprises steps of checking a program(S10), programming(S30), and increasing a counter value(S50). In the program check step(S10), it is checked if the target program cells, selected during an execution of the program, are all normally programmed and the programs are executed as many as a designated number. The programming step(S30) is performed in the case that the target program cells, selected during an execution of the program, are not all normally programmed and the programs are not executed as many as a designated number. The programming step(S30) is executed on the selected target memory cells by using a CHE(Channel Hot Electron) method. The programming step(S30) is finished, then the counter value increasement step(S50) starts to count the number of the program execution.
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