| 摘要 |
PURPOSE: To increase contrast, and resolution, and enlarge the margin of the quantity of exposure, by adjusting the quantity of auxiliary exposure, according to the density of patterns, in a scattering angle limitating system of an electron beam exposure method which performs the proximity effect correction by a ghost method at the same time with pattern exposure. CONSTITUTION: In a scattering angle limitating system of electron beam exposure method which controls the quantity of passed scattered electrons scattered by mask by means of a limiting aperture, using a mask having a scattering region, and performs the pattern exposure by the scattering contrast by the difference of the scattering angle of the electron beams having passed through the mask, the quantity of scattered electrons passing through the limiting aperture is adjusted by controlling the scattering angle of the scattered electrons, changing the thickness of the scattering region of the mask, according to the density of patterns, and the proximity effect compensation is performed at the same time with the pattern exposure by the auxiliary exposure of the scattered electrons having passed through the limiting aperture.
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