发明名称 Semiconductor configuration and use thereof
摘要 A semiconductor configuration, in particular based on silicon carbide, is specified which rapidly limits a short-circuit current to an acceptable current value. For this purpose, when a predetermined saturation current is exceeded, a lateral channel region is pinched off, and the current is limited to a value below the saturation current.
申请公布号 US6232625(B1) 申请公布日期 2001.05.15
申请号 US19990472060 申请日期 1999.12.23
申请人 SICED ELECTRONICS DEVELOPMENT GMBH & CO. KG 发明人 BARTSCH WOLFGANG;MITLEHNER HEINZ;STEPHANI DIETRICH
分类号 H01L29/66;H01L29/24;H01L29/808;H02H9/02;(IPC1-7):H01L29/80 主分类号 H01L29/66
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