SOI SEMICONDUCTOR IC FOR REMOVING FLOATING BODY EFFECT OF SOI MOS TRANSISTOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: An SOI semiconductor IC and a fabricating method thereof are to remove a floating body effect and a parasitic bipolar effect to prevent a body region of the transistor from being electrically floated, thereby increasing reliability of a product. CONSTITUTION: An isolated transistor active region(1a) is formed on the first conductive type semiconductor layer. The first conductive type body line(1b) as a part of the semiconductor layer is disposed at one side of the transistor active region. A device isolating film encloses a sidewall of the body line and the transistor active region to be contacted with a buried insulating layer. The first conductive type body extending portion is extended from the sidewall of the transistor active region to be electrically connected with the body line. The first conductive type body extending portion(1e) has a thinner thickness than the transistor active region. A body insulating(3a) layer is formed on the body extending portion. An insulated gate pattern crosses an upper portion of the transistor active region to be overlapped with the body insulating layer.