发明名称 APPARATUS AND METHOD FOR PROCESSING EXHAUST GAS OF PROCESS FOR MANUFACTURING SEMICONDUCTOR
摘要 PURPOSE: A method for processing exhaust gas of a process for manufacturing a semiconductor is provided to prevent particles and reaction byproducts from stopping up an inlet of a thermal oxidation reactor, by inducing protection gas to the thermal oxidation reactor to separate halogen-containing exhaust gas from vapor. CONSTITUTION: Vapor is supplied to an end of the inlet of an oxidation unit. At least a part of a halogen-containing component of an exhaust fluid is transformed to a type that can be more efficiently processed, while the vapor at the end of the inlet of the oxidation unit is used. At least a part of the component of the exhaust fluid that can be oxidized in the oxidation unit is oxidized.
申请公布号 KR20010039524(A) 申请公布日期 2001.05.15
申请号 KR20000003615 申请日期 2000.01.26
申请人 ADVANCED TECHNOLOGY MATERIALS INC. 发明人 ARNO JOSE I.;VERMEULEN ROBERT M.
分类号 H01L21/02;B01D53/68;B01D53/70;(IPC1-7):H01L21/02 主分类号 H01L21/02
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