发明名称 |
APPARATUS AND METHOD FOR PROCESSING EXHAUST GAS OF PROCESS FOR MANUFACTURING SEMICONDUCTOR |
摘要 |
PURPOSE: A method for processing exhaust gas of a process for manufacturing a semiconductor is provided to prevent particles and reaction byproducts from stopping up an inlet of a thermal oxidation reactor, by inducing protection gas to the thermal oxidation reactor to separate halogen-containing exhaust gas from vapor. CONSTITUTION: Vapor is supplied to an end of the inlet of an oxidation unit. At least a part of a halogen-containing component of an exhaust fluid is transformed to a type that can be more efficiently processed, while the vapor at the end of the inlet of the oxidation unit is used. At least a part of the component of the exhaust fluid that can be oxidized in the oxidation unit is oxidized.
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申请公布号 |
KR20010039524(A) |
申请公布日期 |
2001.05.15 |
申请号 |
KR20000003615 |
申请日期 |
2000.01.26 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS INC. |
发明人 |
ARNO JOSE I.;VERMEULEN ROBERT M. |
分类号 |
H01L21/02;B01D53/68;B01D53/70;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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