CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A capacitor of a semiconductor memory device is provided to intensify a breakdown voltage of a dielectric layer between a storage electrode and a plate electrode even though mismatching between the storage electrode and a buried contact hole occurs. CONSTITUTION: A substrate(10) has a cell pad(40), which is exposed through a buried contact hole(53) of an interlayer dielectric(50). A storage electrode has a bar pattern(70) and a conductive spacer. The bar pattern is formed on the interlayer dielectric, electrically connected to the cell pad through the buried contact hole. The conductive spacer is formed on a sidewall of the bar pattern. A dielectric layer(80) is formed on the storage electrode. A plate electrode(90) is formed on the storage electrode by interposing the dielectric layer.