| 摘要 |
PURPOSE: To provide a p-channel MOS transistor, where a slow trap degradation is reduced, as well as a manufacturing method for a semiconductor device using the p-channel MOS transistor. CONSTITUTION: An n-type impurity region 16 is formed near a gate interface comprising a gate interface 15 between a gate electrode 14 and a gate oxide film 13. The n-type impurity region 16 is formed by injecting a n-type impurity such as arsenic (As) or phosphorus (P), and by changing the energy potential of the gate oxide film, a hole trap amount which causes slow trap is reduced. As the hole trap amount decreases, the slow trap deteriorates, in otherwords, a very large fluctuation in a threshold voltage caused by the slow trap as well as decrease in on-current which follows it, are prevented.
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