发明名称 PIEZOELECTRIC SINGLE CRYSTAL WAFER
摘要 PROBLEM TO BE SOLVED: To provide a piezoelectric single crystal wafer for an elastic surface wave or pseudo-elastic surface wave device having remarkably decreased small foreign materials attached to the surface for forming an electrode and the crack of the wafer and provide a piezoelectric single crystal wafer giving a filter, etc. having excellent characteristics in high production yield. SOLUTION: The surface roughness Ra of the outer circumference to form an electrode for the transmission and reception of elastic surface wave or pseudo-elastic surface wave and excluding the surface and back face of the wafer is adjusted to <=2.3μm.
申请公布号 JP2001130997(A) 申请公布日期 2001.05.15
申请号 JP19990306404 申请日期 1999.10.28
申请人 SHIN ETSU CHEM CO LTD 发明人 SHIONO YOSHIYUKI;KUWABARA YOSHINORI;RYUO TOSHIHIKO
分类号 H01L41/18;C30B29/30;H03H9/25;(IPC1-7):C30B29/30 主分类号 H01L41/18
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