发明名称 |
PIEZOELECTRIC SINGLE CRYSTAL WAFER |
摘要 |
PROBLEM TO BE SOLVED: To provide a piezoelectric single crystal wafer for an elastic surface wave or pseudo-elastic surface wave device having remarkably decreased small foreign materials attached to the surface for forming an electrode and the crack of the wafer and provide a piezoelectric single crystal wafer giving a filter, etc. having excellent characteristics in high production yield. SOLUTION: The surface roughness Ra of the outer circumference to form an electrode for the transmission and reception of elastic surface wave or pseudo-elastic surface wave and excluding the surface and back face of the wafer is adjusted to <=2.3μm.
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申请公布号 |
JP2001130997(A) |
申请公布日期 |
2001.05.15 |
申请号 |
JP19990306404 |
申请日期 |
1999.10.28 |
申请人 |
SHIN ETSU CHEM CO LTD |
发明人 |
SHIONO YOSHIYUKI;KUWABARA YOSHINORI;RYUO TOSHIHIKO |
分类号 |
H01L41/18;C30B29/30;H03H9/25;(IPC1-7):C30B29/30 |
主分类号 |
H01L41/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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